SIMSOur PHI Model 2100 TRIFT II system is a state-of-the-art Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) instrument. It uses a pulsed primary ion beam to desorb and ionize species from a sample surface. The resulting secondary ions are accelerated into a mass spectrometer, where they are mass analyzed by measuring their time-of-flight from the sample surface to the detector. An image is generated by rastering a finely focused beam across the sample surface. Due to the parallel detection nature of TOF-SIMS, the entire mass spectrum is aquired from every pixel in the image. The mass spectrum and the secondary ion images are then used to determine the composition and distribution of sample surface constituents.



Schematics of ion optics

TOF-SIMS Features:


·        Surface sensitivity

            uppermost 2 nm

·        Detection limits

            ppm – ppb range

·        Spatial resolution

120/300 nm (determined by diameter of primary Ga /In ion beam)

·        Elemental and Molecular Chemical Information

            practical mass range -  < 10,000 amu

high mass resolution -  allows separation of P (30.9738) from 30SiH (30.9816) and Fe (55.9349) from Si2 (55.9539)

·        Sample type

Solid materials including conductors, semi-conductors, insulators, biomaterials, polymers

·        Analytical applications

Polymer coatings, surface contamination (inorganic and organic), surface modification chemistry, trace impurities, thin film depth profiling

·        System configuration

Three ion sources: liquid metal Indium (optional Galium) ion gun, Oxygen ion gun and Cesium ion gun making available a wide range of applications.

·        Unique properties

Parallel detection (a whole mass spectrum is recorded, no information is lost);

Retrospective imaging and depth profiling;

Shallow depth profiling;

Charge neutralization for insulator analysis